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| CHA5297 37-40GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5297 is a three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.15m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vd1 Vd2 Vg3 Vd3 IN OUT Vg1 Vg2 Vd2 Vg3 Vd3 Main Features Performances : 37-40GHz 28dBm output power @ 1dB comp. gain 10 dB 1dB gain DC power consumption, 1.6A @ 3.5V Chip size : 4.16 x 2.6 x 0.05 mm Main Characteristics Tamb. = 25C Symbol Fop G P1dB Id Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Bias current Min 37 Typ 10 28 1.6 Max 40 Unit GHz dB dBm A ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA52972149 - 29-May-02 1/4 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5297 Electrical Characteristics Tamb = +25C, Vd = 3.5V Id =1.6A 37-40GHz High Power Amplifier Symbol Fop G G Is P1dB P03 VSWRin Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation Pulsed output power at 1dB compression (1) Output power at 3dB gain compression (1) Input VSWR (2) Min 37 Typ Max 40 Unit GHz dB dB dB dBm dBm 10 1 40 28 29 3:1 3.5:1 152 1.6 2 VSWRout Output VSWR (2) Tj Id Junction temperature for 80C backside Bias current @ small signal C A (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. Absolute Maximum Ratings Tamb. = 25C (1) Symbol Vd Id Vg Ig Vdg Pin Tch Ta Tstg Parameter Maximum drain bias voltage with Pin max=18dBm Maximum drain bias current Gate bias voltage Gate bias current Maximum drain to gate voltage (Vd - Vg) Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values +4.0 2.2 -2 to +0.4 -5.5 to +5.5 +6.0 +22 +175 -40 to +80 -55 to +125 Unit V A V mA V dBm C C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA52972149 - 29-May-02 2/4 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 37-40GHz High Power Amplifier Chip Assembly and Mechanical Data CHA5297 To Vd1,2 DC Drain supply feed To Vd3 DC Drain supply feed 10nF 10nF 120pF 120pF 120pF 120pF RF IN RF OUT 120pF 120pF 120pF 120pF 10nF 10nF To Vg1,2,3 DC Gate supply feed To Vd3 DC Drain supply feed Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 50m. All dimensions are in micrometers ) Ref. : DSCHA52972149 - 29-May-02 3/4 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5297 Application note Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage 37-40GHz High Power Amplifier Due to 50m thickness, specific care is requested for the handling and assembly. Ordering Information Chip form : CHA5297-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA52972149 - 29-May-02 4/4 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
Price & Availability of CHA5297-99F00
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